PALO ALTO, Calif. (AP) – James M. Early, an electrical
engineer and inventor best known for his work with transistors, has died.
He was 81.
Early created much of the design theory of bipolar transistors at Bell
Laboratories in Murray Hill, N.J., where he worked for Nobel Prize winner
William Shockley.
Early died Monday, his daughter said.
He worked for 18 years at Bell Laboratories, where he also discovered the
effects of space-charge layer widening, which became known as "The
Early Effect."
In 1969, Early moved to Palo Alto to work at Fairchild Semiconductor as
vice president of research and development. Early held 14 patents by the
time he retired in 1986 from Fairchild.
Fairchild Semiconductor, created in 1957 by eight scientists who
originally were brought out from the East Coast by Shockley,
revolutionized the chip industry and became the entrepreneurial breeding
ground for several other companies, including Intel Corp., National
Semiconductor and Advanced Micro Devices.
Pioneering engineer and inventor James Early dies
The Associated Press 1/15/2004, 5:11 p.m. ET
PALO ALTO, Calif. (AP) -- James M. Early, an electrical engineer and
inventor best known for his pioneering work with transistors, has died. He
was 81. Early died Monday at a veteran's hospital in Palo Alto.
Early created much of the design theory of bipolar transistors at Bell
Laboratories in Murray Hill, N.J., where he worked for Nobel Prizewinner
William Shockley.
Early was born in Syracuse, N.Y., the second of nine children. He
worked for 18 years at Bell Laboratories, where he also discovered the
effects of space-charge layer widening, which became known as "The
Early Effect."
In 1969, Early moved to Palo Alto to work at Fairchild Semiconductor as
vice president of research and development. Early held 14 patents by the
time he retired in 1986 from Fairchild.
Fairchild Semiconductor, created in 1957 by eight scientists who
originally were brought out from the East Coast by Shockley,
revolutionized the chip industry and became the entrepreneurial breeding
ground for several other companies, including Intel Corp., National
Semiconductor and Advanced Micro Devices. Those eight scientists left
Shockley to create Fairchild Semiconductor.
"What strikes me ... is how he made time for family," his
daughter, Rhoda Alexander, said Thursday. "He built us a
sandbox."
Early, who biked to work, was a voracious reader and also took the
family swimming, sailing and on hikes, Alexander said. He also volunteered
to make recordings for the blind from technical manuals and journals.
Early is survived by his wife, Mary Agnes; seven daughters, a son, 11
grandchildren, eight brothers and a sister.
below from ny times
James Early, Engineer Who Helped Create a Transistor, Dies at 81
By JOHN MARKOFF
Published: January 19, 2004
ames
M. Early, an electrical engineer who pioneered increased transistor
performance in the 1950's at Bell Labs, died on Jan. 12 at the veterans
hospital in Palo Alto, Calif. He was 81 and lived in Palo Alto.
The cause of death was severe asthma, which Mr. Early had suffered from
since childhood, a daughter, Mary Beth Early, said.
When Dr. Early arrived at the Bell Labs research laboratory in Murray Hill,
N.J., in September 1951, his first task was to measure the performance of the
first transistors made at Bell Labs, and also those from General
Electric and RCA.
During the 1950's, he made theoretical contributions that led to faster
transistor performance, which was crucial for applications like television,
the FM transistor radio and early military radar.
He is most widely recognized for describing an aspect of the behavior of
bipolar transistors, known as the Early Effect. Transistor designers used the
effect to optimize the performance of the transistors, which were tiny
switches. He remained at Bell Labs for 18 years before joining Fairchild
Camera and Instrument in Palo Alto. He was a laboratory director for Bell Labs
in Murray Hill from 1962 to 1964 and in Allentown, Pa., from 1964 to 1969.
While at Bell Labs, he created the oscillator transistor for the first
United States satellite, led the development of solar cells and transistors
for the Telstar I satellite and participated in the original integrated
circuit work at the laboratory.
When he went West in 1969, he became director of the Fairchild Research
Center. Under his guidance, that company developed commercial charged coupled
devices, which were used in early military reconnaissance satellites.
When he retired from Fairchild in 1986, he took his rack of ties and held a
necktie-burning celebration, telling his family that he was delighted to be
done with what he considered to be an instrument of torture.
Dr. Early received his Bachelor of Science in pulp and paper manufacturing
in 1943 from the New York State College of Forestry in Syracuse. After serving
in the Army, he went to graduate school at Ohio State University, where he
received his Ph.D. in 1951.
In addition to his daughter Mary Beth Early, who lives in Brooklyn, he is
survived by his wife of 55 years, Mary Agnes, and seven other children,
Kathleen Early of Tassajara, Calif.; Joan Farrell of Ocean City, N.J.; Rhoda
Alexander of Menlo Park, Calif.; Maureen Matthews and Rosemary Early, both of
Campbell, Calif.; James M. Early Jr. of Mountain View, Calif.; Margot Early of
Ridgway, Colo.; and 11 grandchildren. Also surviving are eight brothers and
sisters, Joe Early, Mary Beth O'Neill and Kathleen Eccles, all of Syracuse;
John Early of Sterling, N.J.; Rhoda Corcoran of Fresno, Calif.; Frank Early of
Lakewood, Colo.; Jane Early of Bradenton Beach, Fla.; and Larry Early of
Madera, Calif.
Palo
Alto, Calif.
January
12, 2004
PALO
ALTO, Calif. — James M. Early, 81, husband of the former Mary
Agnes Valentine of Logan, passed away after a long illness on
January 12, 2004, in Palo Alto, Calif.
Dr. Early was well known in the field of semiconductor
engineering, held 14 patents, and was a fellow of the IEEE.
He is survived by his wife of 55 years, eight children and eleven
grandchildren.
In lieu of flowers, the family requests contributions be sent to
Catholic Charities of Santa Clara County, 2625 Zamker Road, San
Jose, CA 95134.
Roller Hapgood & Tinney Funeral Directors of Palo Alto,
Calif., is in charge of the arrangements.
James
M. Early (A’48–SM’54–F’59–LF’88)
was born in Syracuse, NY, in
1922. He received the B.S. degree
in pulp and paper manufacturing from New York
State College of Forestry, Syracuse in 1943 and the
M.Sc. and Ph.D. in electrical engineering from Ohio
State University (OSU), Columbus, in 1948 and
1951, respectively.
He served in the
U.S. Army from 1943 to 1945.
In 1951, he joined
Bell Telephone Laboratories at Murray
Hill, NJ, as Member of Technical Staff. He worked
on grown and alloy germanium transistors, germanium
diffused base transistors, silicon diffused transistors, solar cells
for Telstar, and integrated
circuits. After 18 years at Bell Laboratories, the last
seven as a Laboratory Director (Murray Hill 1962–1964, Allentown, PA
1964–1969), he
joined Fairchild Camera and Instrument at Palo Alto, CA. There,
he was Director of Semiconductor Research from 1969 to 1983 and a Technical
Advisor to the vice-president of research from 1983 to his retirement
in 1986. At Fairchild, he was
directly responsible for processes as well as devices.
He pushed Fairchild into the use of ion beam implantation, whole wafer
lithography, electron beam mask-making, and CCD device development.
He contributed technically to
bipolar memories, fast ECL circuit technology, CMOS
without guard rings, and many CCD projects. He holds about a dozen patents,
has published 12 or more papers, and given scores of talks.
Dr. Early is a
Fellow of AAAS and a member of APS. He has received the Texnikoi
and Distinguished Alumnus Awards from OSU and the J. J. Ebers Award
from the IEEE Electron Devices Society. He served IEEE and its IRE predecessor
on the first transistor standardization committees, on many meeting
and program committees, and was
active in the annual device research conferences.
He served the
Advisory Group on Electron Devices (Department of Defense) for
20 years, retiring in 1982 after six years as chairman of the main panel
of advisors.
About the author:
I was born and raised in Syracuse, NY, second child and
second son in a family of nine
children blessed my marvelous parents
and limited but adequate resources. An outstanding high
school physics teacher, the late John Condon, gave me my start
in technical analysis. I attended the NY State College of Forestry,
from which I received a B. Sc. in 1943, specializing in
pulp and paper manufacturing. The forestry college taught us
well, with long hours and long work. At Ohio State while in
the U.S. Army, I found electrical engineering easier and more
interesting than the paper industry. Enrolling at Ohio Sate full
time (including four years as full-time instructor) after the second
World War, I received the M.Sc. and eventually the PhD.
in 1951. In graduate school, my advisors, Profs. E. M. Boone
and D. J. Kraus wisely gave me almost no guidance in
my thesis and dissertation. Through their restraint and encouragement,
I became used to choosing and defining my own
analytical problems and approaches. I was grateful to them.
Looking back, I am even more grateful.
In early September of 1951, Bell Laboratories gave a one
week introductory transistor in
Princeton, NJ. Shockley’s book was
our prime text. In this world I was young, short on self-confidence,
and much in awe of our instructors.
There, one day, Shockley told of his then
recently-proposed
junction
field effect transistor. He drew on the board postulated drain
voltage characteristics in which the drain current at fixed gate-to-source
voltage would initially rise with diminishing slope
as it does in actual devices. After saturation is reached, he indicated,
the current would gradually cut off, falling to zero.
With some trepidation I questioned this, proposing that
the
drain current could not
fall because it was involved in bringing the
channel-to-gate voltage to the pinch-off point. He thought for
a very short time, agreed, and changed the characteristic to
the false pinch-off region we are familiar with. We never talked
of the matter again, but he was always cordial and treated
me as a technical peer. The incident probably helped my
self-confidence in dealing with semiconductor theory."
Mary Agnes, my beloved wife, and I have been blessed with
two and a half dozen children (that’s
right, 2+6=8), of whom seven,
including the youngest are daughters.
A
CKNOWLEDGMENT
The author is grateful to his many collaborators over the
years, who helped make his work in
transistor technology development
both fulfilling and enjoyable. This account was developed
from material presented at the 1992 Device Research Conference
[1], [2]. The author is also very grateful to
Peter Asbeck for encouragement to put this talk in print, editing
it with sensible emendations and clarifications. Thank you,
Peter!
R
EFERENCES
[1] J. M. Early, "Classic semiconductor devices-point
contact through HSI;
Solving easy problems,"
IEEE
Trans. Electron Devices,
vol. 39, p. 263,
Nov. 1992.
[2] , "Classic semiconductor devices-point contact
through HSI;
Solving easy
problems," in 50th
Annu. Device Res. Conf.,
Cambridge, MA, June 22–24,
1992.
James M. Early
(A’48–SM’54–F’59–LF’88)
was
born in Syracuse, NY, in 1922. He received the B.S.
degree in pulp and paper manufacturing from New
York State College of Forestry, Syracuse in 1943 and
the M.Sc. and Ph.D. in electrical engineering from
Ohio State University (OSU), Columbus, in 1948
and 1951, respectively.
He served in the U.S. Army from 1943 to 1945.
In 1951, he joined Bell Telephone Laboratories at
Murray Hill, NJ, as Member of Technical Staff. He
worked on grown and alloy germanium transistors,
germanium diffused base transistors, silicon diffused
transistors, solar cells
for Telstar, and integrated circuits. After 18 years at
Bell Laboratories, the
last seven as a Laboratory Director (Murray Hill 1962–1964,
Allentown, PA
1964–1969), he joined Fairchild Camera and Instrument at
Palo Alto, CA.
There, he was Director of Semiconductor Research from 1969
to 1983 and a
Technical Advisor to the vice-president of research from
1983 to his retirement
in 1986. At Fairchild, he was directly responsible for
processes as well as
devices. He pushed Fairchild into the use of ion beam
implantation, whole
wafer lithography, electron beam mask-making, and CCD
device development.
He contributed technically to bipolar memories, fast ECL
circuit technology,
CMOS without guard rings, and many CCD projects. He holds
about a dozen
patents, has published 12 or more papers, and given scores
of talks.
Dr. Early is a Fellow of AAAS and a member of APS. He has
received the
Texnikoi and Distinguished Alumnus Awards from OSU and the
J. J. Ebers
Award from the IEEE Electron Devices Society. He served
IEEE and its IRE
predecessor on the first transistor standardization
committees, on many meeting
and program committees, and was active in the annual
device research conferences.
He served the Advisory Group on Electron Devices
(Department of Defense)
for 20 years, retiring in 1982 after six years as chairman
of the main panel
of advisors.
James M. Early was born (July 25, 1922) in Syracuse, New
York, second of the nine children of Rhoda G. Early and the late Frank J.
Early. He received the B.S. in Pulp and Paper Manufacturing in 1943 from
the New York State College of Forestry (Syracuse). After army service at
Ohio State University and the Manhattan Engineer District, Oak Ridge,
Tenn., he returned to O.S.U. as a graduate student and instructor in
Electrical Engineering. He received the M.S. (magnetron resonances) in
1948 and the Ph.D. (anisotropic dielectric waveguides) in 1951.
He joined Bell Laboratories in September 1951. During
his eighteen years at Bell, he created much of the design theory of
bipolar transistors, discovered the effects of space-charge layer widening
("Early effect"), created the oscillator transistor for the
first U.S. satellite, led development of solar cells and transistors for
Telstar I, and led the development of sealed junction technology as part
of Bell Lab's first major IC work, ending his Bell Labs service as
Director of the Electron Device Laboratory at Allentown, Pa. He joined
Fairchild in September 1969 as leader of their research and development
work. Under his direction and often with his significant personal
contributions, Fairchild Research Center created the isoplanar bipolar
process and the prototype of the its isoplanar memory products, created
the buried channel CCD imagers which have revolutionized low light level
electronic imaging, created the prototypes of the 4000C series of 15 volt
CMOS, created the 100K series of ECL, and contributed to the creation of
FAST. His leadership brought Fairchild the first ion implanter in a
merchant semiconductor manufacturing company (1970) and the first
commercial electron beam mask-making machine (MEBES 1 - 1977). He became a
technical adviser in mid-1983 and retired from Fairchild at the end of
1986.
He is a fellow of IEEE (1958), a member of APS, AAAS,
and Sigma XI. His IEEE service includes the Fellow Committee, ED Adcom, ED
Transactions, IEEE PROCEEDINGS, and SPECTRUM. He is an IEEE representative
on the Fritz Medal committee of the IEEE.
He has published numerous technical papers and holds
fourteen patents.
He was associated with the Advisory Group on Electron
Devices (ODDR&E) since 1962 to 1982 and was its chairman for four
years.
Jim and his wife, Mary Agnes, of 42 happy years live in
Palo Alto, California. Their pastimes include duplicate bridge, bicycling,
swimming, and reading.
Early
Effect [ELECTRONICS] A
change in the base width of a bipolar transistor as a function of
base-collector bias voltage.
---------
Base width modulation (the Early effect)
is the modulation of the base width by the voltage
appearing across the base-collector junction. An increase in the base to
collector voltage increases the collector junction depletion layer
width, which results in the narrowing of the base width.
base-width
reduction in a bipolar transistor due to the widening of the
base-collector junction with increasing base-collector voltage.
Early effect may be observed on output characteristics (collector
current versus base-collector voltage) as a slight increase of the
collector current in the saturation region.
2472
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 48, NO. 11, NOVEMBER 2001
fairness to all
don't make off color comments.
equality
my name is out there where it needs to be.
We had a good time!
Jim Early, after
whom the famous "Early effect" in named, is one of the invited
contributors. In his paper, Jim has quoted some versus from a song
entitled "Hell's Bells Laboratory" written by Professor Ian
Mackintosh. This just reinforces the realization that we are humans
first and then technical professionals. As such, human aspects
surrounding history making technical inventions, such as the TRANSISTOR,
are very important to us. In here, you will find a hyperlink to the
recording of the actual performance of this composition.
The first
performance of this work of art was given at the Device Research
Conference in Boulder Colorado in 1957 and played later at several EDS
sponsored technical conferences. Many times we have been asked that this
be shared on a wider basis with all EDS members. Hopefully, this web
based publication will meet this request. Regarding some of the verbiage
used in the lyrics, I would urge listeners to take it as a true
reflection of history, giving them a first hand view of the social scene
in those days. Please click here on Ian's
gift (MP3 File - please contact your local
computer administrator to get the appropriate plug in) to make
the song come alive.
1959 For contributions in the
development of high frequency transistors.
_______
EDS J.J. Ebers Award
This award was established in 1971 with the intention
to foster progress in electron devices and to commemorate the life
activities of Jewell James Ebers, whose distinguished contributions,
particularly in the transistor art, shaped the understanding and
technology of electron devices. It is presented annually to honor an
individual(s) who has made either a single or a series of contributions
of recognized scientific, economic, or social significance in the broad
field of electron devices. The recipient(s) is awarded a certificate and
check for $5,000, presented at the International
Electron Devices Meeting
1979
James M. Early
"For Outstanding Technical Contributions to Electron
Devices
_______
Ohio State University College of
Engineernig Texnikoi Award
Texnikoi is an organization of undergraduate
students in the College of Engineering whose purpose is to recognize
qualities of leadership, integrity, and personality as exemplified by
active participation and leadership in extracurricular activities.
Each year the active membership of Texnikoi selects one of the younger
alumni of the College of Engineering as a recipient of the Texnikoi
Outstanding Alumna/us Award. This award is based upon their
achievements since graduation, evaluated in light of the objectives of
Texnikoi.
1967
Dr. James M. Early,
EE ’48
Engineering Hall of Fame - Electronic Design Magazine
Dec-2011
Dec 1, 2011 ...James M. Early
observed and described the shrinking width of a bipolar transistor's
base area caused by the expansion of the base-collector ...
It has been a tough year for the electronics
industry as we mourned the loss of these ...James M.
Early observed and described the shrinking width of a
bipolar ...
Historic Bell Telephone
Laboratories Monographs
(#2097) Effects of Space-Charge Layer Widening in Junction
Transistors
(#2201) Design Theory of Junction Transistors
(#2244) P-N-I-P and N-P-I-N Junction Transistor Triodes
____
#2952. B.E.Deal, J.M.Early, The evolution of silicon
semiconductor technology: 1952-1977 J. Electrochem. Soc. 126
1 (1979) 20C-32C
____
2468
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 48, NO. 11,
NOVEMBER 2001
#2468 - IEEE TRANSACTIONS ON ELECTRON DEVICES,
VOL. 48, NO. 11, NOVEMBER 2001
J. M. Early,
"Classic semiconductor devices-point contact through HSI;
Solving easy problems,
" IEEE Trans. Electron Devices, vol. 39, p. 263, Nov.
1992.
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